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Other articles related with "4H-SiC metal-oxide-semiconductor capacitors"：
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107101 |
Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO |
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Chin. Phys. B
2017 Vol.26 (10): 107101-107101
[Abstract]
(550)
[HTML 1 KB]
[PDF 1086 KB]
(363)
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